Published February 21, 2014
| Version v1
Journal article
Donor-vacancy pairs in irradiated n-Ge: A searching look at the problem
Creators
- 1. IoffePhysicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ulitsa 26, 194021 St. Petersburg (Russian Federation)
Description
The present situation concerning the identification of vacancy-donor pairs in irradiated n-Ge is discussed. The challenging points are the energy states of these defects deduced from DLTS spectra. Hall effect data seem to be at variance with some important conclusions drawn from DLTS measurements. Critical points of the radiation-produced defect modeling in n-Ge are highlighted
Additional details
Identifiers
- DOI
- 10.1063/1.4865593;
Publishing Information
- Journal Title
- AIP Conference Proceedings
- Journal Volume
- 1583
- Journal Issue
- 1
- Journal Page Range
- p. 3-7
- ISSN
- 0094-243X
- CODEN
- APCPCS
Conference
- Title
- 27. international conference on defects in semiconductors
- Acronym
- ICDS-2013
- Dates
- 21-26 Jul 2013
- Place
- Bologna (Italy)
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 45084947
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- DEFECTS; HALL EFFECT; IRRADIATION; SIMULATION; SPECTRA; VACANCIES
- Descriptors DEC
- CRYSTAL DEFECTS; CRYSTAL STRUCTURE; POINT DEFECTS
Optional Information
- Notes
- (c) 2014 AIP Publishing LLC