Published July 2019
| Version v1
Journal article
Features of Pore Nucleation in p-Si during Its Electrochemical Etching
Creators
- 1. MIREA—Russian Technological University (Russian Federation)
Description
Features of the formation of porous silicon layers during anodic etching of p-Si were considered. A fundamental difference between the mechanisms of the formation of nanostructured layers on p-and n-Si was shown.
Additional details
Identifiers
Publishing Information
- Journal Title
- Doklady. Chemistry
- Journal Volume
- 487
- Journal Issue
- 1
- Journal Page Range
- p. 165-167
- ISSN
- 0012-5008
- CODEN
- DKCHAY
INIS
- Country of Publication
- Russian Federation
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 54108774
- Subject category
- S37: INORGANIC, ORGANIC, PHYSICAL AND ANALYTICAL CHEMISTRY;
- Descriptors DEI
- ELECTROCHEMISTRY; ETCHING; LAYERS; NANOSTRUCTURES; NUCLEATION; POROUS MATERIALS; SILICON
- Descriptors DEC
- CHEMISTRY; ELEMENTS; MATERIALS; SEMIMETALS; SURFACE FINISHING
Optional Information
- Copyright
- Copyright (c) 2019 Pleiades Publishing, Ltd.