Tunneling Current of Electron in Armchair Graphene Nanoribbon Bipolar Transistor Model Using Transfer Matrix Method

The tunneling current of n-p-n bipolar junction transistor AGNR-based is modeled with semi-numerical method. The exponential solution from Schrödinger equation is used and solved analytically. The potential profile of n-p-n BJT divided into several segments in the numerical method. Then, the solved analytical result is used in the numerical method to compute the electron transmittance. Transfer Matrix Method (TMM) is the numerical method used to compute the electron transmittance. From the calculated transmittance the tunneling current can be computed by using Landauer formula with aid of Gauss-Legendre Quadrature (GLQ). Next, the tunneling current is computed with several change of variables which are base-emitter voltage (V_BE), base-collector voltage (V_BC), temperature and the AGNR's width. The computed tunneling current shows that the larger value of applied voltage for both V_BE and V_BC results in larger value of tunneling current. At the lower temperature, the current is larger. The computed tunneling current shows that at wider width of AGNR, the current is also larger. This is due to the decreased band-gap energy (Eg) because of the wider width of AGNR. (paper)