Published 2019 | Version v1
Journal article

Local structure of potassium doped nickel oxide: A combined experimental-theoretical study

  • 1. Argonne National Laboratory (ANL), Lemont, IL (United States). Materials Science Div.
  • 2. Argonne National Laboratory (ANL), Argonne, IL (United States). Computational Science Div.
  • 3. Argonne National Laboratory (ANL), Argonne, IL (United States). X-ray Science Div.
  • 4. University of Illinois at Urbana-Champaign, Urbana, IL (United States). Dept. of Materials Science and Engineering

Description

The electronic structure of Mott and charge-transfer insulators can be tuned through charge doping to achieve a variety of fascinating physical properties, e.g., superconductivity, colossal magnetoresistance, and metal-to-insulator transitions. Strong correlations between d electrons give rise to these properties but they are also the reason why they are inherently difficult to model. This holds true especially for the evolution of properties upon charge doping. Here, we hole-dope nickel oxide with potassium and elucidate the resulting structure by using a range of experimental and theoretical tools; potassium is twice as big as nickel and is expected to lead to distortions in its vicinity. Our measurements of the x-ray absorption fine structure (XAFS) show a significant distortion around the dopant and that the dopant is fully incorporated in the nickel oxide matrix. In parallel, the theoretical investigations include developing a Gaussian process for quantum Monte Carlo calculations to determine the lowest energy local structure around the potassium dopant. While the optimal structures determined from density functional theory and quantum Monte Carlo calculations agree very well, we find a large discrepancy between the experimentally determined structures and the theoretical doped structures. Further modeling indicates that the discrepancy is likely due to vacancy defects. Our work shows that potassium doping is a possible avenue to doping NiO, in spite of the size of the potassium dopant. In addition, the Gaussian process opens up a new route towards obtaining structure predictions outside of density functional theory.

Availability note (English)

Available from https://www.osti.gov/servlets/purl/1576988; https://www.osti.gov/biblio/1576988; DOE Accepted Manuscript full text, or the publishers Best Available Version will be available free of charge after the embargo period

Additional details

Publishing Information

Journal Title
Physical Review Materials
Journal Volume
3
Journal Issue
11
Journal Page Range
vp.
ISSN
2475-9953

Optional Information