Improving the morphological and magnetic properties of permalloy films by adopting ultra-low-pressure sputtering
Description
A series of permalloy (NiFe) thin films of fixed thickness were grown by DC-sputtering at different argon pressures and without buffer layers. When the pressure was lowered from 1.2 Pa to 0.004 Pa, the coercivity decreased remarkably form 1353.5 A/m to 119.4 A/m. In addition, the NiFe film fabricated at ultra-low-pressure showed low damping, and its zero-field linewidth approached zero. Based on ferromagnetic resonance (FMR) and atomic force microscopy (AFM) observations, we attribute the excellent magnetic properties of NiFe film fabricated under ultra-low pressure to its improved morphological and magnetic uniformity. - Highlights: • NiFe thin films deposited with ultralow-pressure. • The ultralow-pressure deposition NiFe films yielded excellent microstructure and magnetic properties. • The ultralow-pressure deposition is an effective way for tuning of magnetic and dynamic properties of NiFe film
Availability note (English)
Available from http://dx.doi.org/10.1016/j.tsf.2013.11.005Additional details
Identifiers
- DOI
- 10.1016/j.tsf.2013.11.005;
- PII
- S0040-6090(13)01821-X;
Publishing Information
- Journal Title
- Thin Solid Films
- Journal Volume
- 550
- Journal Page Range
- p. 616-620
- ISSN
- 0040-6090
- CODEN
- THSFAP
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 46128650
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ARGON; ATOMIC FORCE MICROSCOPY; COERCIVE FORCE; DEPOSITION; FERROMAGNETIC RESONANCE; IRON; LAYERS; LINE WIDTHS; MAGNETIC PROPERTIES; MICROSTRUCTURE; NICKEL; PERMALLOY; SPUTTERING; THIN FILMS
- Descriptors DEC
- ALLOYS; ELEMENTS; FILMS; FLUIDS; GASES; IRON ALLOYS; MAGNETIC RESONANCE; METALS; MICROSCOPY; NICKEL ALLOYS; NONMETALS; PHYSICAL PROPERTIES; RARE GASES; RESONANCE; TRANSITION ELEMENT ALLOYS; TRANSITION ELEMENTS
Optional Information
- Copyright
- Copyright (c) 2013 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.