Published August 2007 | Version v1
Journal article Metadata-only

Three-dimensional topography using an X-ray microbeam and novel slit technique

Creators

  • 1. Fuji Electric Advanced Technology Co. Ltd., 1 Fuji-machi, Hino, Tokyo 191-8502 (Japan)
  • 2. University of Hyogo, 3-2-1 Kouto, Kamigori, Ako, Hyogo 678-1297 (Japan)

Description

This paper describes section topography using an X-ray microbeam and a novel slit having a V-shaped crevice (V-slit). The V-slit is characterized by a sharp-pointed exponential transmission curve, which enables depth-resolved imaging with high spatial resolution. An iterative deconvolution for image restoration is effectively executable, providing submicron resolution in cross-sectional diffraction imaging. The new method is applied to the analysis of screw dislocation in a SiC diode. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Availability note (English)

Available from: http://dx.doi.org/10.1002/pssa.200675703

Additional details

Identifiers

DOI
10.1002/pssa.200675703;

Publishing Information

Journal Title
Physica Status Solidi. A, Applied Research
Journal Volume
204
Journal Issue
8
Journal Page Range
p. 2706-2713
ISSN
0031-8965
CODEN
PSSABA

Conference

Title
8. biennial conference on high resolution X-ray diffraction and imaging
Acronym
XTOP 2006
Dates
19-21 Sep 2006
Place
Karlsruhe (Germany)

INIS

Country of Publication
Germany
Country of Input or Organization
Germany
INIS RN
38091310
Subject category
S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
Resource subtype / Literary indicator
Conference
Descriptors DEI
IMAGE PROCESSING; ITERATIVE METHODS; PHOTON BEAMS; SCREW DISLOCATIONS; SEMICONDUCTOR DIODES; SILICON CARBIDES; SPATIAL RESOLUTION; THREE-DIMENSIONAL CALCULATIONS; X-RAY DIFFRACTION; X-RAY EQUIPMENT; X-RAY RADIOGRAPHY
Descriptors DEC
BEAMS; CALCULATION METHODS; CARBIDES; CARBON COMPOUNDS; COHERENT SCATTERING; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; DIFFRACTION; DISLOCATIONS; EQUIPMENT; INDUSTRIAL RADIOGRAPHY; LINE DEFECTS; MATERIALS TESTING; NONDESTRUCTIVE TESTING; PROCESSING; RESOLUTION; SCATTERING; SEMICONDUCTOR DEVICES; SILICON COMPOUNDS; TESTING

Optional Information

Notes
With 7 figs., 11 refs.. SICI: 0031-8965(200708)204:8<2706::AID-PSSA200675703>3.0.TX;2-0