Nonlinear Hall effect on a disordered lattice
- 1. Department of Physics and Shenzhen Institute for Quantum Science and Engineering, Southern University of Science and Technology (SUSTech), Shenzhen 518055, China
- 2. Department of Physics, Hubei University, Wuhan 430062, China
- 3. Shenzhen Key Laboratory of Quantum Science and Engineering, Shenzhen 518055, China
- 4. International Quantum Academy, Shenzhen 518048, China
- 5. Institute for Theoretical Physics and Astrophysics, University of Würzburg, 97074 Würzburg, Germany
- 6. Quantum Science Center of Guangdong-Hong Kong-Macao Greater Bay Area (Guangdong), Shenzhen 518045, China
- 7. International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, China
- 8. Interdisciplinary Center for Theoretical Physics and Information Sciences (ICTPIS), Fudan University, Shanghai 200433, China
- 9. Hefei National Laboratory, Hefei 230088, China
Description
The nonlinear Hall effect has recently attracted significant interest due to its potential as a promising spectral tool and for device applications. A theory of the nonlinear Hall effect on a disordered lattice is a crucial step towards explorations in realistic devices, but has not yet been addressed. We study the nonlinear Hall response on a lattice, which allows us to introduce strong disorder numerically. We reveal a disorder-induced Berry curvature that was not discovered in previous perturbation theories. The disorder-induced Berry curvature induces a fluctuation of the nonlinear Hall conductivity, which anomalously increases as the Fermi energy moves from the band edges to higher energies. More importantly, the fluctuation may explain those observations in recent experiments. We also find signatures of localization of the nonlinear Hall effect. This Letter shows a territory of the nonlinear Hall effect yet to be explored.
Additional details
Identifiers
- DOI
- 10.1103/PhysRevB.110.L081301;
- arXiv
- arXiv:2309.07000;
- Crossref Funder ID
- 10.13039/501100012166; 10.13039/501100001809; 10.13039/501100021171; 10.13039/501100010877;
Publishing Information
- Journal Title
- Physical Review B
- Journal Volume
- 110
- Journal Issue
- 8
- Journal Page Range
- 6 pgs.
- ISSN
- 1550-235X
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- Subject category
- S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- BAND THEORY; CRYSTAL LATTICES; DISTURBANCES; EQUIPMENT; EXPLORATION; FERMI GAS; FERMI LEVEL; FLUCTUATIONS; HALL EFFECT; LATTICE FIELD THEORY; NONLINEAR PROBLEMS; NUMERICAL ANALYSIS; PERTURBATION THEORY; STRONG-COUPLING MODEL; TEMPERATURE ZERO K
- Descriptors DEC
- CONSTRUCTIVE FIELD THEORY; CRYSTAL STRUCTURE; ENERGY LEVELS; FIELD THEORIES; MATHEMATICAL MODELS; MATHEMATICS; PARTICLE MODELS; QUANTUM FIELD THEORY; VARIATIONS
Optional Information
- Copyright
- ©2024 American Physical Society
- Contract/Grant/Project number
- 11925402; 12350402; 12374041; 2023B0303000011
- Notes
- Contact Email: Contact author: luhz@sustech.edu.cn; Record automatically processed
- Funding organization
- National Key Research and Development Program of China; National Natural Science Foundation of China; Basic and Applied Basic Research Foundation of Guangdong Province; Science, Technology and Innovation Commission of Shenzhen Municipality