Published August 20, 2024 | Version v1
Journal article

Nonlinear Hall effect on a disordered lattice

  • 1. Department of Physics and Shenzhen Institute for Quantum Science and Engineering, Southern University of Science and Technology (SUSTech), Shenzhen 518055, China
  • 2. Department of Physics, Hubei University, Wuhan 430062, China
  • 3. Shenzhen Key Laboratory of Quantum Science and Engineering, Shenzhen 518055, China
  • 4. International Quantum Academy, Shenzhen 518048, China
  • 5. Institute for Theoretical Physics and Astrophysics, University of Würzburg, 97074 Würzburg, Germany
  • 6. Quantum Science Center of Guangdong-Hong Kong-Macao Greater Bay Area (Guangdong), Shenzhen 518045, China
  • 7. International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, China
  • 8. Interdisciplinary Center for Theoretical Physics and Information Sciences (ICTPIS), Fudan University, Shanghai 200433, China
  • 9. Hefei National Laboratory, Hefei 230088, China

Description

The nonlinear Hall effect has recently attracted significant interest due to its potential as a promising spectral tool and for device applications. A theory of the nonlinear Hall effect on a disordered lattice is a crucial step towards explorations in realistic devices, but has not yet been addressed. We study the nonlinear Hall response on a lattice, which allows us to introduce strong disorder numerically. We reveal a disorder-induced Berry curvature that was not discovered in previous perturbation theories. The disorder-induced Berry curvature induces a fluctuation of the nonlinear Hall conductivity, which anomalously increases as the Fermi energy moves from the band edges to higher energies. More importantly, the fluctuation may explain those observations in recent experiments. We also find signatures of localization of the nonlinear Hall effect. This Letter shows a territory of the nonlinear Hall effect yet to be explored.

Additional details

Identifiers

DOI
10.1103/PhysRevB.110.L081301;
arXiv
arXiv:2309.07000;
Crossref Funder ID
10.13039/501100012166; 10.13039/501100001809; 10.13039/501100021171; 10.13039/501100010877;

Publishing Information

Journal Title
Physical Review B
Journal Volume
110
Journal Issue
8
Journal Page Range
6 pgs.
ISSN
1550-235X

Optional Information

Copyright
©2024 American Physical Society
Contract/Grant/Project number
11925402; 12350402; 12374041; 2023B0303000011
Notes
Contact Email: Contact author: luhz@sustech.edu.cn; Record automatically processed
Funding organization
National Key Research and Development Program of China; National Natural Science Foundation of China; Basic and Applied Basic Research Foundation of Guangdong Province; Science, Technology and Innovation Commission of Shenzhen Municipality