Published June 2012 | Version v1
Journal article

Optical transitions in CdxHg1−xTe-based quantum wells and their analysis with account for the actual band structure of the material

  • 1. Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation)

Description

Quantum-confinement levels in a CdxHg1−xTe-based rectangular quantum well are calculated in the framework of the four-band Kane model taking into account mixing between the states of electrons and three types of holes (heavy, light, and spin-split holes). Comparison of the calculation results with experimental data on the photoluminescence of CdxHg1−xTe-based quantum wells suggests that optical transitions involving the conduction and light-hole bands are possibly observed in the spectra.

Additional details

Identifiers

Publishing Information

Journal Title
Semiconductors
Journal Volume
46
Journal Issue
6
Journal Page Range
p. 773-778
ISSN
1063-7826
CODEN
SMICES

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
43094765
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
PHOTOLUMINESCENCE; QUANTUM WELLS; SPECTRA
Descriptors DEC
EMISSION; LUMINESCENCE; NANOSTRUCTURES; PHOTON EMISSION

Optional Information

Copyright
Copyright (c) 2012 Pleiades Publishing, Ltd.