Published June 2012
| Version v1
Journal article
Optical transitions in CdxHg1−xTe-based quantum wells and their analysis with account for the actual band structure of the material
- 1. Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation)
Description
Quantum-confinement levels in a CdxHg1−xTe-based rectangular quantum well are calculated in the framework of the four-band Kane model taking into account mixing between the states of electrons and three types of holes (heavy, light, and spin-split holes). Comparison of the calculation results with experimental data on the photoluminescence of CdxHg1−xTe-based quantum wells suggests that optical transitions involving the conduction and light-hole bands are possibly observed in the spectra.
Additional details
Identifiers
Publishing Information
- Journal Title
- Semiconductors
- Journal Volume
- 46
- Journal Issue
- 6
- Journal Page Range
- p. 773-778
- ISSN
- 1063-7826
- CODEN
- SMICES
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 43094765
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- PHOTOLUMINESCENCE; QUANTUM WELLS; SPECTRA
- Descriptors DEC
- EMISSION; LUMINESCENCE; NANOSTRUCTURES; PHOTON EMISSION
Optional Information
- Copyright
- Copyright (c) 2012 Pleiades Publishing, Ltd.