Thermoelectric properties of boron and boron phosphide film

This paper describes the thermoelectric properties of amorphous or polycrystalline boron and boron phosphide films prepared using chemical vapor deposition and molecular beam deposition. The temperature dependencies of electrical conductivity of a-B and distorted B13P2 films obey the Mott's rule of log σ vs T-1/4, while those of polycrystalline BP films have linear relationship between log σ vs T-1. The a-B and B13P2 films have high electric resistivity and show p-type conductors while BP film shows n-type conductor. The estimated thermoelectric figure of merit of boron phosphide film is compatible to that of sintered specimen, but there remains some problems for a-B to alter