Published 2010 | Version v1
Journal article

Growth and Characterization of Ge100-xDyx(x=2) Nano wires

  • 1. Hephaistos Nanotechnology Research Center, University of Cyprus, 75 Kallipoleos Avenue, P.O. Box 20537, 1678 Nicosia (Cyprus)
  • 2. Advanced Materials Research Institute (AMRI), University of New Orleans, New Orleans, LA 70148 (United States)

Description

Novel semiconducting Germanium-Dysprosium nano wires are fabricated by a combined two-step method, which consists of initial arc-melting of the elemental constituents into a pellet and its heat treatment, followed by thermal vapor transport of the powdered pellet in a tube reactor for fabrication of the nano wires. The nano materials are fabricated on gold nucleation seeds on Si/SiO2 substrates. The thermodynamic conditions in the reactor are carefully chosen to produce wires with diameters in a narrow, specific range. This nano fabrication method ensures high phase purity and crystallinity of nano wires. Based on the results and theoretical work, it is concluded that the fabricated Ge98Dy2 materials are in a glassy state below 20 K.

Additional details

Publishing Information

Journal Title
Advances in Condensed Matter Physics (Online)
Journal Volume
2010
Journal Issue
2010
Journal Page Range
p. 6
ISSN
1687-8124

INIS

Country of Publication
Egypt
Country of Input or Organization
Egypt
INIS RN
42071369
Subject category
S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Numerical Data
Descriptors DEI
DYSPROSIUM; GERMANIUM COMPOUNDS; GLASS; GOLD; HEAT TREATMENTS; NANOSTRUCTURES; NUCLEATION; SEMICONDUCTOR DEVICES; SOLID CLUSTERS; THEORETICAL DATA; THERMODYNAMICS; VAPORS
Descriptors DEC
DATA; ELEMENTS; FLUIDS; GASES; INFORMATION; METALS; NUMERICAL DATA; RARE EARTHS; TRANSITION ELEMENTS