Published 2012
| Version v1
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Study of secondary ion emission of impurities of GaN/SiC depending on annealing temperature
Creators
- 1. Inst. Ehlektroniki AN RUz, Tashkent (Uzbekistan)
- 2. FTI im. Ioffe, Sankt-Peterburg (Russian Federation)
- 3. Fiziko-Tekhnicheskij Inst. AN RUz, Tashkent (Uzbekistan)
Description
no abstract available
Files
45105078.pdf
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Additional details
Additional titles
- Original title (Russian)
- Исследование вторично-ионной эмиссии примесей GaN/SiC в зависимости от температуры отжига
Publishing Information
- Publisher
- Universitetskaya kniga
- Imprint Place
- Moscow (Russian Federation)
- Imprint Title
- Summaries of reports of XLII International Tulinov conference on physics of interactions of charged particles with crystals
- Imprint Pagination
- 222 p.
- Journal Page Range
- p. 107
- Report number
- INIS-RU--536
Conference
- Title
- 42. International Tulinov conference on physics of interactions of charged particles with crystals
- Original Conference Title
- XLII mezhdunarodnaya Tulinovskaya konferentsiya po fizike vzaimodejstviya zaryazhennykh chastits s kristallami
- Dates
- 29-31 May 2012
- Place
- Moscow (Russian Federation)
INIS
- Country of Publication
- Russian Federation
- Country of Input or Organization
- Russian Federation
- INIS RN
- 45105078
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- No Abstract, Conference, Numerical Data
- Descriptors DEI
- ADSORPTION; ANNEALING; EXPERIMENTAL DATA; GALLIUM NITRIDES; IMPURITIES; ION EMISSION; SECONDARY EMISSION; SILICON CARBIDES; SPUTTERING; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0400-1000 K
- Descriptors DEC
- CARBIDES; CARBON COMPOUNDS; DATA; EMISSION; GALLIUM COMPOUNDS; HEAT TREATMENTS; INFORMATION; NITRIDES; NITROGEN COMPOUNDS; NUMERICAL DATA; PNICTIDES; SILICON COMPOUNDS; SORPTION; TEMPERATURE RANGE
Optional Information
- Notes
- 1 fig. Imprint:Tezisy dokladov XLII mezhdunarodnoj Tulinovskoj konferentsii po fizike vzaimodejstviya zaryazhennykh chastits s kristallami