Simulations of C60 bombardment of Si, SiC, diamond and graphite
- 1. Department of Chemistry and Biochemistry, College of Charleston, Charleston, SC 29424 (United States)
- 2. Department of Electronic and Electrical Engineering, University of Surrey, Guildford, GU2 SXH (United Kingdom)
- 3. Department of Chemistry, Penn State University, University Park, PA 16802 (United States)
Description
Molecular dynamics simulations of the 20-keV C60 bombardment at normal incidence of Si, SiC, diamond and graphite targets were performed. The unique feature of these targets is that strong covalent bonds can be formed between carbon atoms from the C60 projectile and atoms in the solid material. The mesoscale energy deposition footprint (MEDF) model is used to gain physical insight into how the sputtering yields depend on the substrate characteristics. A large proportion of the carbon atoms from the C60 projectile are implanted into the lattice structure of the target. The sputtering yield from SiC is ∼twice that from either diamond or Si and this can be explained by both the region of the energized cylindrical tract created by the impact and the number density. On graphite, the yield of sputtered atoms is negligible because the open lattice allows the cluster to deposit its energy deep within the solid. The simulations suggest that build up of carbon with a graphite-like structure would reduce any sputtering from a solid with C60+ bombardment.
Availability note (English)
Available from http://dx.doi.org/10.1016/j.apsusc.2008.05.236Additional details
Identifiers
- DOI
- 10.1016/j.apsusc.2008.05.236;
- PII
- S0169-4332(08)01102-1;
Publishing Information
- Journal Title
- Applied Surface Science
- Journal Volume
- 255
- Journal Issue
- 4
- Journal Page Range
- p. 837-840
- ISSN
- 0169-4332
- CODEN
- ASUSEE
Conference
- Title
- 16. international conference on secondary ion mass spectrometry
- Acronym
- SIMS 16
- Dates
- 29 Oct - 2 Nov 2007
- Place
- Ishikawa Ongakudo, Kanazawa (Japan)
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 41009264
- Subject category
- S36: MATERIALS SCIENCE; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- CYLINDRICAL CONFIGURATION; DIAMONDS; FULLERENES; GRAPHITE; ION MICROPROBE ANALYSIS; KEV RANGE 10-100; MASS SPECTROSCOPY; MOLECULAR DYNAMICS METHOD; SILICON; SILICON CARBIDES; SIMULATION; SOLIDS; SPUTTERING
- Descriptors DEC
- CALCULATION METHODS; CARBIDES; CARBON; CARBON COMPOUNDS; CHEMICAL ANALYSIS; CONFIGURATION; ELEMENTS; ENERGY RANGE; KEV RANGE; MICROANALYSIS; MINERALS; NONDESTRUCTIVE ANALYSIS; NONMETALS; SEMIMETALS; SILICON COMPOUNDS; SPECTROSCOPY
Optional Information
- Copyright
- Copyright (c) 2008 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.