Published 1998
| Version v1
Miscellaneous
Recent progress towards devices in homoepitaxial growth on single crystal substrates
Creators
- 1. Dept. of Optoelectronicas, University of Ulm, Ulm (Sweden)
- 2. High Pressure Research Center, Polish Academy of Sciences, Warsaw (Poland)
Description
no abstract available
Additional details
Additional titles
- Augmented title (English)
- thin films
Publishing Information
- Imprint Title
- Abstracts of The Third European GaN Workshop EGW-3
- Imprint Pagination
- 97 p.
- Journal Page Range
- p. 39
Conference
- Title
- 3. European GaN Workshop EGW-3
- Dates
- 22-24 Jun 1998
- Place
- Warsaw (Poland)
INIS
- Country of Publication
- Poland
- Country of Input or Organization
- Poland
- INIS RN
- 31064551
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- No Abstract, Conference, Non-conventional Literature
- Descriptors DEI
- ALUMINIUM COMPOUNDS; CRYSTAL DEFECTS; EPITAXY; GALLIUM COMPOUNDS; GALLIUM NITRIDES; INDIUM COMPOUNDS; LIGHT EMITTING DIODES; MEETINGS; NITRIDES; SUBSTRATES; THIN FILMS
- Descriptors DEC
- CRYSTAL GROWTH METHODS; CRYSTAL STRUCTURE; FILMS; GALLIUM COMPOUNDS; NITRIDES; NITROGEN COMPOUNDS; PNICTIDES; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES