Published August 31, 2011 | Version v1
Journal article

Interdiffusion at the BaCuSeF/ZnTe interface

  • 1. Department of Physics, Oregon State University, Corvallis, OR 97331-6507 (United States)
  • 2. CAMCOR High Resolution and Analytical Facility, Eugene, OR 97403-1241 (United States)
  • 3. School of Mechanical, Industrial, and Manufacturing Engineering, Oregon State University, Corvallis, OR 97331-6001 (United States)
  • 4. Department of Chemistry, Oregon State University, Corvallis, OR 97331-6507 (United States)
  • 5. Department of Materials and Earth Sciences, Darmstadt University of Technology, Darmstadt 64287 (Germany)

Description

BaCuSeF/ZnTe is a model system to investigate physical and chemical properties of the interfaces of non-oxide wide-bandgap p-type semiconductors with materials used in chalcogenide solar cells. The BaCuSeF/ZnTe interface was studied using electron microscopy and photoelectron spectroscopy. Both techniques indicate that Se and Cu from BaCuSeF diffuse into ZnTe creating an interdiffused layer between these two materials. The interdiffusion may be attributed to the differences in materials formation enthalpies and to Fermi level pinning in BaCuSeF.

Availability note (English)

Available from http://dx.doi.org/10.1016/j.tsf.2010.12.125

Additional details

Identifiers

DOI
10.1016/j.tsf.2010.12.125;
PII
S0040-6090(10)01774-8;

Publishing Information

Journal Title
Thin Solid Films
Journal Volume
519
Journal Issue
21
Journal Page Range
p. 7369-7373
ISSN
0040-6090
CODEN
THSFAP

Conference

Title
Thin film chalcogenide photovoltaic materials
Acronym
EMRS 2010 Spring Meeting Symposium M
Dates
7-11 Jun 2010
Place
Strasbourg (France)

Optional Information

Copyright
Copyright (c) 2010 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.