Experimental investigation on EMP effect of SRAM

The response of SRAM with different memory size at different read/write state was studied under EMP environment with pulse width of 50 ns, 350 ns and 1μs.The electric field amplitude of EMP ranges from 2.5 to 40 kV/m. It was found that the upset number has no obvious relation with memory size of SRAM and band width of EMP. The electric field amplitude is the crucial parameter leading to the upset effects. Further more, the upset effects of SRAM at read write state was much more seriously compared to the SRAM was not at read/write state. (authors)