High-performance quasi-vertical GaN Schottky barrier diode with anode selective fluorine treatment

In this letter, we report a high performance GaN quasi-vertical Schottky barrier diode (SBD) on sapphire substrate with a planar anode selective fluorine treatment (SFT). The presented SBD with anode SFT–SBD exhibits a large forward current density over 2 kA cm⁻² and a low differential specific on-resistance of 0.49 mΩ cm². Compared to the conventional SBD, the leakage current of SFT–SBD is suppressed over 4 orders of magnitude, leading to the breakdown voltage (BV) dramatically improved from 78 to 145 V, but without severe degradation of the on-state performance. The simulation results indicate that the anode SFT can effectively reduce the path of leakage current at reverse bias, leading to the suppressed leakage current thus enhanced BV. (paper)