Structure of TiO2 films prepared by using inductively coupled plasma-assisted chemical vapor deposition (ICP-CVD)

Titanium-dioxide films with anatase and rutile structures were synthesized by using inductively coupled plasma assisted chemical vapor deposition (ICP-CVD) without additional substrate heating. The substrate temperature was increased up to 450 K by plasma heating. Even at such low process temperatures, the deposition rate was high (50 nm/min), as compared to the values reported in the literature. The deposition rate increased significantly at ICP power between 100 and 200 W, where an E-H mode transition from capacitive to inductive coupling occurred. The chlorine concentration was less than 0.5% at ICP powers greater than 200 W. TiO2 films with the anatase phase showed superior hydrophilicity with a water contact angle of < 5 .deg. . The rutile phase was formed at low process temperatures (<450 K) with a high H2 flow rate (30 sccm) and high ICP powers (>300 W), indicating that a high ion flux is an important factor in rutile formation.