Published October 1993 | Version v1
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Electric-field effects on shallow donor impurity in a harmonic quantum dot

  • 1. International Centre for Theoretical Physics, Trieste (Italy)
  • 2. Shanghai Jiao Tong Univ., Shanghai (China). Inst. of Condensed Matter Physics

Description

Electric-field effects on shallow donor impurity states in a harmonic quantum dot are investigated theoretically using the effective-mass approximation within the strong confinement regime. It is shown that the transition energies between the ground state and the low-lying excited states shrink with enhancement of electric field strength. The results also indicate that the transition energy allowed for left circular light polarization increases with enhancement of magnetic field strength, while the transition energy allowed for right circular light polarization decreases with increasing magnetic field strength. (author). 26 refs, 3 figs

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Additional details

Publishing Information

Imprint Pagination
17 p.
Report number
IC--93/346

INIS

Country of Publication
International Atomic Energy Agency (IAEA)
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
25046542
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
BINDING ENERGY; COULOMB CORRECTION; ELECTRIC FIELDS; ENERGY-LEVEL TRANSITIONS; GALLIUM ARSENIDES; HAMILTONIANS; HARMONIC OSCILLATORS; MAGNETIC FIELDS; SEMICONDUCTOR MATERIALS
Descriptors DEC
ARSENIC COMPOUNDS; ARSENIDES; CORRECTIONS; ENERGY; GALLIUM COMPOUNDS; MATERIALS; MATHEMATICAL OPERATORS; PNICTIDES; QUANTUM OPERATORS