Published 1999
| Version v1
Miscellaneous
Open
Radiation tolerance of NPN bipolar technology with 30 GHz Ft
Creators
- 1. CEA Bruyeres le Chatel, 91 (France)
- 2. Institut des Sciences de la Matiere et du Rayonnement, 14 - Caen (France)
- 3. CEA Grenoble, Lab. d'Electronique et de Technologie de l'Informatique LETI, 38 (France)
- 4. France Telecom CNET Grenoble, 38 - Meylan (France)
Description
The ionizing dose and neutron radiation tolerance of Si QSA bipolar technology has been investigated. The transistors exhibit good radiation tolerance up to 100 krad and 5 1013 n/cm2 without any special fabrication steps to harden the technology to the studied effects. (authors)
Availability note (English)
Available from INIS in electronic formFiles
34078061.pdf
Files
(152.0 kB)
| Name | Size | Download all |
|---|---|---|
|
md5:af902c117805384fc5b574c63a5f49c8
|
152.0 kB | Preview Download |
Additional details
Additional titles
- Original title (English)
- Tolerance aux irradiations d'une technologie NPN bipolaire avec une Ft de 30 GHz
Publishing Information
- Imprint Pagination
- [2 p.]
- Report number
- INIS-FR--2067
Conference
- Title
- 5. European conference on radiation and its effects on components and systems
- Original Conference Title
- 5. congres europeen les radiations et leurs effets sur les composants et les systemes
- Dates
- 13-17 Sep 1999
- Place
- Abbaye de Fontevraud (France)
INIS
- Country of Publication
- France
- Country of Input or Organization
- France
- INIS RN
- 34078061
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- DOSE RATES; GAMMA RADIATION; MOS TRANSISTORS; P-N JUNCTIONS; PHYSICAL RADIATION EFFECTS
- Descriptors DEC
- ELECTROMAGNETIC RADIATION; IONIZING RADIATIONS; RADIATION EFFECTS; RADIATIONS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR JUNCTIONS; TRANSISTORS
Optional Information
- Notes
- 7 refs.