Comparative analysis of radiation defect generation in n-Si and n-SiC at MeV-energy proton irradiation

Published 2010 | Version v1

Miscellaneous Metadata-only

1. Sankt-Peterburgskij Gosudarstvennyj Politekhnicheskij Univ., Sankt-Peterburg (Russian Federation)
2. Fiziko-Tekhnicheskij Inst. im. A.F. Ioffe RAN, Sankt-Peterburg (Russian Federation)

no abstract available

Additional details

Original title (Russian): Сравнительный анализ радиационного дефектообразования в н-Си и н-SiC при облучении протонами МэВ-ных энергий

Publisher: Universitetskaya kniga
Imprint Place: Moscow (Russian Federation)
Imprint Title: Summaries of reports of 40th International conference on physics of interactions of charged particles with crystals
Imprint Pagination: 226 p.
Journal Page Range: p. 179
Report number: INIS-RU--527

Title: 40. International conference on physics of interaction of charged particles with crystals
Original Conference Title: XL mezhdunarodnaya konferentsiya po fizike vzaimodejstviya zaryazhennykh chastits s kristallami
Dates: 25-27 May 2010
Place: Moscow (Russian Federation)

Country of Publication: Russian Federation
Country of Input or Organization: Russian Federation
INIS RN: 43032901
Subject category: S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator: No Abstract, Conference, Numerical Data
Descriptors DEI: CARRIER MOBILITY; ELECTRICAL PROPERTIES; EXPERIMENTAL DATA; FRENKEL DEFECTS; MEV RANGE; N-TYPE CONDUCTORS; PHYSICAL RADIATION EFFECTS; PROTON BEAMS; SILICON; SILICON CARBIDES
Descriptors DEC: BEAMS; CARBIDES; CARBON COMPOUNDS; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; DATA; ELEMENTS; ENERGY RANGE; INFORMATION; MATERIALS; MOBILITY; NUCLEON BEAMS; NUMERICAL DATA; PARTICLE BEAMS; PHYSICAL PROPERTIES; POINT DEFECTS; RADIATION EFFECTS; SEMICONDUCTOR MATERIALS; SEMIMETALS; SILICON COMPOUNDS; VACANCIES

Notes: Imprint:Tezisy dokladov 40. mezhdunarodnoj konferentsii po fizike vzaimodejstviya zaryazhennykh chastits s kristallami