Influence of magnetic disorders on quantum anomalous Hall effect in magnetic topological insulator films beyond the two-dimensional limit
- 1. Beijing Key Laboratory of Nanophotonics and Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing 100081 (China)
- 2. Shenzhen Key Laboratory of Advanced Thin Films and Applications, College of Physics and Energy, Shenzhen University, Shenzhen 518060 (China)
- 3. Department of Physics and the Center of Theoretical and Computational Physics, The University of Hong Kong, Pokfulam Road, Hong Kong (China)
- 4. International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871 (China)
Description
Quantum anomalous Hall effect (QAHE) has been experimentally realized in magnetic topological insulator (MTI) thin films fabricated on magnetically doped . In an MTI thin film with the magnetic easy axis along the normal direction (z-direction), orientations of magnetic dopants are randomly distributed around the magnetic easy axis, acting as magnetic disorders. With the aid of the non-equilibrium Green's function and Landauer–Büttiker formalism, we numerically study the influence of magnetic disorders on QAHE in an MTI thin film modeled by a three-dimensional tight-binding Hamiltonian. It is found that, due to the existence of gapless side surface states, QAHE is protected even in the presence of magnetic disorders as long as the z-component of magnetic moment of all magnetic dopants are positive. More importantly, such magnetic disorders also suppress the dissipation of the chiral edge states and enhance the quality of QAHE in MTI films. In addition, the effect of magnetic disorders depends very much on the film thickness, and the optimal influence is achieved at certain thickness. These findings are new features for QAHE in three-dimensional systems, not present in two-dimensional systems. (paper)
Availability note (English)
Available from http://dx.doi.org/10.1088/1367-2630/aab4e8Additional details
Identifiers
Publishing Information
- Journal Title
- New Journal of Physics
- Journal Volume
- 20
- Journal Issue
- 4
- Journal Page Range
- [8 p.]
- ISSN
- 1367-2630
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 52031361
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ANTIMONY TELLURIDES; BISMUTH TELLURIDES; CHIRALITY; DOPED MATERIALS; GREEN FUNCTION; HALL EFFECT; HAMILTONIANS; MAGNETIC INSULATION; MAGNETIC MOMENTS; NUMERICAL ANALYSIS; THIN FILMS; TWO-DIMENSIONAL SYSTEMS
- Descriptors DEC
- ANTIMONY COMPOUNDS; BISMUTH COMPOUNDS; CHALCOGENIDES; CRYSTAL LATTICES; CRYSTAL STRUCTURE; FILMS; FUNCTIONS; MATERIALS; MATHEMATICAL OPERATORS; MATHEMATICS; PARTICLE PROPERTIES; QUANTUM OPERATORS; TELLURIDES; TELLURIUM COMPOUNDS