Temperature dependence of the cosphi conductance in Josephson tunnel junctions determined from plasma resonance experiments
Creators
- 1. Physics Laboratory I, The Technical University of Denmark, DK-2800 Lyngby, Denmark
Description
The microwave response at 9 GHz of Sn-O-Sn tunnel-junction current biased at zero dc voltage has been measured just below the critical temperature T/sub c/ of the Sn films. The temperature dependence of the cosphi conductance is determined from the resonant response at the junction plasma frequency f/sub p/ as the temperature is decreased from T/sub c/. We used three different schemes for observation of the plasma oscillations: (a) second-harmonic generation (excitation at approx. 4.5 GHz, f/sub p/ approx. 4.5 GHz); (b) mixing (excitations at approx. 9 and approx. 18 GHz, f/sub p/ approx. 9 GHz); (c) parametric half-harmonic oscillation (excitation at approx. 18 GHz, f/sub p/ approx. 9 GHz). Measurements were possible in two temperature intervals; 0.994 < or = T/T/sub c/ < or = 0.982 and 0.965 > or = T/T/sub c/ > or = 0.930, with the result that as the temperature was decreased the cosphi amplitude first increased from about zero to positive values and then at lower temperatures decreased approaching -1 at the lowest temperatures of the experiment
Additional details
Publishing Information
- Journal Title
- Phys. Rev., B
- Journal Volume
- 18
- Journal Issue
- 7
- Series
- Phys. Rev., B.
- Journal Page Range
- 3220-3230
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 10440852
- Subject category
- S36: MATERIALS SCIENCE; S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
- Descriptors DEI
- ELECTRIC CONDUCTIVITY; JOSEPHSON JUNCTIONS; PLASMA WAVES; TEMPERATURE DEPENDENCE; TIN OXIDES; TRANSITION TEMPERATURE; TUNNEL EFFECT
- Descriptors DEC
- CHALCOGENIDES; ELECTRICAL PROPERTIES; OXIDES; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; SEMICONDUCTOR JUNCTIONS; THERMODYNAMIC PROPERTIES; TIN COMPOUNDS