Ultra-low noise charge sensitive preamplifier for scintillation detection with avalanche photodiodes in PET applications
- 1. Dept. of Nuclear Medicine and Radiobiology, Univ. of Sherbrooke, Sherbrooke
Description
The need for compact, fast, low-noise front-end electronics in high resolution positron emission tomography (PET) has prompted this effort to design a preamplifier suitable for avalanche photodiode-based scintillation detectors. Due to the small signals from the detectors (< .03 rhoC/meV), a preamplifier with ultra-low noise performance in the 5 to 20 MHz range is essential to achieve the timing resolution required by the PET application. Out of many available technologies, a new third generation MOSFET was selected and implemented as input transistor in an original charge sensitive (CSP) design. Performance among the best reported to date are obtained. The new design was implemented as a dual-channel preamplifier in high density hybrid (thick film) technology
Additional details
Publishing Information
- Journal Title
- IEEE Trans. Nucl. Sci.
- Journal Volume
- NS-34
- Journal Issue
- 1
- Series
- IEEE Trans. Nucl. Sci.
- Journal Page Range
- 91-96
- ISSN
- 0018-9499
- CODEN
- IETNA
Conference
- Title
- Nuclear science and nuclear power systems symposium.
- Dates
- 29-31 Oct 1986.
- Place
- Washington, DC (USA).
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 18060725
- Subject category
- S62: RADIOLOGY AND NUCLEAR MEDICINE; S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; S42: ENGINEERING;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- DENSITY; FILMS; MHZ RANGE 01-100; MOSFET; NOISE; PERFORMANCE; PHOTODIODES; POSITRON COMPUTED TOMOGRAPHY; PREAMPLIFIERS; SCINTILLATION COUNTERS; SIGNAL-TO-NOISE RATIO; SIGNALS; SPECIFICATIONS; THICKNESS; TIME RESOLUTION
- Descriptors DEC
- AMPLIFIERS; COMPUTERIZED TOMOGRAPHY; DIMENSIONS; ELECTRONIC EQUIPMENT; EMISSION COMPUTED TOMOGRAPHY; EQUIPMENT; FIELD EFFECT TRANSISTORS; FREQUENCY RANGE; MEASURING INSTRUMENTS; MHZ RANGE; MOS TRANSISTORS; PHYSICAL PROPERTIES; RADIATION DETECTORS; RESOLUTION; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES; TIMING PROPERTIES; TOMOGRAPHY; TRANSISTORS
Optional Information
- Secondary number(s)
- CONF-861007--.