Effect of electron irradiation on cadmium sulfide monocrystal subsurface properties

Distribution by depth of defects, introduced under different treatment of CdS crystal surface, was investigated using cathodoluminescence method. Besides, the crystal rearrangement and redistribution under effet of irradiation by electrons with the energy E=50-4x104eV and the dose assembly being up to Fe ∼ 1018 cm-2 were studied. It is shown, that the radiative characteristic change, caused by electron irradiaion, is connected with defect rearrangement in the area of their concentration. It is assumed, that defect rearrangement under the electron irradiation is connected either with hot electron capture to the deftect antibinding orbital, or with atom external shell ionization