The advanced photocatalytic degradation of atrazine by direct Z-scheme Cu doped ZnO/g-C3N4
Creators
- 1. Faculty of Environment and Labour Safety, Ton Duc Thang University, Ho Chi Minh City (Viet Nam)
- 2. Faculty of Chemistry, University of Science, Vietnam National University, 334 Nguyen Trai, Thanh Xuan, Hanoi (Viet Nam)
- 3. Center of Excellence for Green Energy and Environmental Nanomaterials (CE-GrEEN), Nguyen Tat Thanh University, Ho Chi Minh City (Viet Nam)
- 4. NTT Hi-Tech Institute, Nguyen Tat Thanh University, Ho Chi Minh City 700000 (Viet Nam)
- 5. Materials Science and Technology Program, College of Arts and Sciences, Qatar University, Doha 2713 (Qatar)
- 6. VNU Key Laboratory of Advanced Materials for Green Growth, University of Science, Vietnam National University, 334 Nguyen Trai, Thanh Xuan, Hanoi (Viet Nam)
Description
Herein, Cu was incorporated into ZnO lattice to reduce its band gap as well as to extend its visible radiation response. The obtained Cu-ZnO was continuously integrated with g-C3N4 to create Cu-ZnO/g-C3N4 Z-direct scheme photocatalyst for advanced atrazine removal. Radical scavenging experiments have been also conducted to clearly figure out photocatalytic mechanism for degradation of atrazine by the synthesized photocatalyst. The synthesized Cu-ZnO only utilized the generated h+ for atrazine degradation (direct and indirect via formation hydroxyl radicals (• OH)) and the g-C3N4 only utilized the generated e− for atrazine degradation (indirect via reaction with O2 to form superoxide anion, which needed to continuously react with H2O to form • OH). Therefore, the photocatalytic atrazine degradation by synthesized Cu-ZnO material was greater than that by synthesized g-C3N4 material. Cu-ZnO/g-C3N4 utilized both generated e− and h+ for degradation of atrazine. Thus, the photocatalytic atrazine degradation by the synthesized Cu-ZnO/g-C3N4 was greater than those of single g-C3N4 or Cu-ZnO materials. Finally, the conducted recycling experiments indicated great stability of synthesized Cu-ZnO/g-C3N4 during long-term atrazine degradation process opening new era for application of the material in practical systems.
Additional details
Identifiers
- DOI
- 10.1016/j.apsusc.2019.05.360;
- PII
- S0169433219316800;
Publishing Information
- Journal Title
- Applied Surface Science
- Journal Volume
- 489
- Journal Page Range
- p. 875-882
- ISSN
- 0169-4332
- CODEN
- ASUSEE
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 55045788
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ANIONS; ATRAZINE; CARBON NITRIDES; DOPED MATERIALS; ELECTRONS; HYDROXYL RADICALS; PHOTOCATALYSIS; ZINC OXIDES
- Descriptors DEC
- CARBON COMPOUNDS; CATALYSIS; CHALCOGENIDES; CHARGED PARTICLES; ELEMENTARY PARTICLES; FERMIONS; HERBICIDES; IONS; LEPTONS; MATERIALS; NITRIDES; NITROGEN COMPOUNDS; OXIDES; OXYGEN COMPOUNDS; PESTICIDES; PNICTIDES; RADICALS; ZINC COMPOUNDS
Optional Information
- Copyright
- Copyright (c) 2019 Elsevier B.V. All rights reserved.