Published 1990 | Version v1
Book Metadata-only

Ion-beam induced epitaxial crystallization of NiSi2 and CoSi2

Creators

  • 1. Microelectronics and Materials Technology Centre, Royal Melbourne Inst. of Technology, Melbourne (Australia)

Description

Ion-beam induced epitaxial crystallization (IBIEC) of amorphous NiSi2 and CoSi2 layers is demonstrated. Epitaxial metal silicide layers on (111) Si substrates were implanted with 40 keV Si ions to form amorphous surface layers. IBIEC of amorphous NiSi2 and CoSi2 layers was induced at 13--74 degrees C with 1.5 MeV Ne ion irradiation and proceeded in a layer-by-layer manner from the original amorphous/crystalline interface with activation energies of 0.26 ± 0.07 and 0.21 ± 0.06 eV for NiSi2 and CoSi2, respectively

Additional details

Publishing Information

Publisher
Materials Research Society.
Imprint Place
Pittsburgh, PA (USA)
ISBN
1-55899-045-3
Imprint Title
Beam-solid interactions, physical phenomena
Imprint Pagination
872 p.
Journal Page Range
p. 131-135.

Conference

Title
physical phenomena.
Acronym
Conference on beam-solid interactions
Dates
27 Nov - 2 Dec 1989.
Place
Boston, MA (USA).

INIS

Country of Publication
United States
Country of Input or Organization
United States
INIS RN
22054837
Subject category
S36: MATERIALS SCIENCE; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Conference
Descriptors DEI
AMORPHOUS STATE; COBALT SILICIDES; CRYSTALLIZATION; EPITAXY; INTERFACES; ION BEAMS; ION IMPLANTATION; NICKEL SILICIDES; SILICON; SUBSTRATES; THIN FILMS
Descriptors DEC
BEAMS; COBALT COMPOUNDS; ELEMENTS; FILMS; NICKEL COMPOUNDS; PHASE TRANSFORMATIONS; SEMIMETALS; SILICIDES; SILICON COMPOUNDS; TRANSITION ELEMENT COMPOUNDS

Optional Information

Secondary number(s)
CONF-8911139--.