Published February 15, 2007 | Version v1
Journal article

IR and SIMS studies in 70% SiC-C films of hydrogen introduced with different methods

  • 1. Key Laboratory For Radiation Physics and Technology of Education Ministry, Institute of Nuclear Science and Technology, Sichuan University, Chengdu, 610064 (China)

Description

70% SiC-C films were prepared with magnetron sputtering deposition followed by Ar+ ion bombardment. Hydrogen was then introduced to these films with ion implantation and permeation techniques for a comparison. Infrared (IR) transmission measurements were performed to analyze the hydrogen-related vibrational states in carbon-carbide. And secondary ion mass spectrometry (SIMS) was also employed to analyze hydrogen depth profiles in these SiC-C films

Additional details

Identifiers

DOI
10.1016/j.physb.2006.01.466;
PII
S0921-4526(06)00551-5;

Publishing Information

Journal Title
Physica. B, Condensed Matter
Journal Volume
389
Journal Issue
2
Journal Page Range
p. 207-212
ISSN
0921-4526
CODEN
PHYBE3

Optional Information

Copyright
Copyright (c) 2006 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.