Growth temperature dependence on local structures of Fe0.05Si0.95 diluted magnetic semiconductors studied by X-ray absorption near-edge structure

X-ray absorption near-edge structure (XANES) spectroscopy was used to investigate the local structures of Fe0.05Si0.95 diluted magnetic semiconductors (DMSs) thin film deposited by radio-frequency (RF) reactive magnetron co-sputtering device at temperatures of room-temperature (RT), 473K and 573K. Using the ab inito self-consistent real-space multiple-scattering approach, the experimental XANES spectra can be well reproduced by the theoretical calculation curves. The results indicate that the majority of Fe atoms are located at Si substitutional sites FeSi in Fe0.05Si0.95 at the room temperature. Upon increasing the temperature to 473 and 573 K, the majority of Fe atoms tend to form the FeSi2 compound.