Properties and characteristics of Al-films deposited in dc and rf magnetron systems

An investigation has been made of the glow discharge and deposition characteristics of Al and AlOsub(x)-films using a planar magnetron (2 cm width erosion track 5.5 cm mean diameter) at power inputs up to 1500W, i.e. of the order of 50W/cm2. Films were prepared in Ar, Ar + O2 and Ar + H2 mixtures. Although H2 addition can convert the 'oxygen' discharge mode to that of pure Ar, the sorption of H2 by the deposit produces film blisters. Also the impurity O2-content of films deposited in Ar + H2 mixtures were similar to those for Ar discharges when desorbed oxygen contaminants were present. Information is given on the effects of O2 on the operating voltage and negative bias for dc and rf magnetrons, respectively. Also data is presented on the deposition rates for metal and oxide film growth. (author)