Temperature stable LiNbO3 surface acoustic wave device with diode sputtered amorphous TeO2 over-layer
- 1. Department of Physics and Astrophysics, University of Delhi, Delhi - 110007 (India)
Description
Amorphous TeO2 thin film, sputtered in the O2+Ar(25%+75%) gas environment using a metallic tellurium target, has been identified as an attractive negative temperature coefficient of delay (TCD) material that can yield a temperature stable device when combined with a surface acoustic wave (SAW) device based on positive TCD material such as LiNbO3. The influence of amorphous TeO2 over-layer on the SAW propagation characteristics (velocity and temperature coefficient of delay) of the SAW filters (36 and 70 MHz) based on 128 deg. rotated Y-cut X-propagating lithium niobate (128 deg. Y-X LiNbO3) single crystal has been studied. It is found that 0.042 λ thick TeO2 over-layer on a prefabricated SAW device operating at 36 MHz centre frequency, reduces the TCD of the device from 76 ppm deg. C-1 to almost zero (∼1.4 ppm deg. C-1) without deteriorating its efficiency and could be considered as a suitable alternative for temperature stable devices in comparison to conventional SiO2 over-layer
Additional details
Identifiers
- DOI
- 10.1063/1.1944231;
Publishing Information
- Journal Title
- Applied Physics Letters
- Journal Volume
- 86
- Journal Issue
- 22
- Journal Page Range
- p. 223508-223508.3
- ISSN
- 0003-6951
- CODEN
- APPLAB
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 37017547
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- AMORPHOUS STATE; COMPARATIVE EVALUATIONS; DEPOSITION; LAYERS; LITHIUM COMPOUNDS; MHZ RANGE 01-100; MONOCRYSTALS; NIOBATES; PIEZOELECTRICITY; SILICON OXIDES; SOUND WAVES; TELLURIUM OXIDES; TEMPERATURE COEFFICIENT; THIN FILMS
- Descriptors DEC
- ALKALI METAL COMPOUNDS; CHALCOGENIDES; CRYSTALS; ELECTRICITY; EVALUATION; FILMS; FREQUENCY RANGE; MHZ RANGE; NIOBIUM COMPOUNDS; OXIDES; OXYGEN COMPOUNDS; REACTIVITY COEFFICIENTS; REFRACTORY METAL COMPOUNDS; SILICON COMPOUNDS; TELLURIUM COMPOUNDS; TRANSITION ELEMENT COMPOUNDS
Optional Information
- Notes
- (c) 2005 American Institute of Physics