Interface energetics and atomic structure of epitaxial La1−xSrxCoO3 on Nb:SrTiO3
Creators
- 1. Institute of Mechanics, Materials and Civil Engineering, Université catholique de Louvain, B-1348 Louvain-la-Neuve (Belgium)
- 2. Fujitsu Laboratories, Atsugi, Kanagawa-ken (Japan)
- 3. Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, 4259-G2-25 Nagatsuta, Midori-ku, Yokohama 226–8502 (Japan)
- 4. Graduate School of Engineering, Osaka Prefecture University, 1-1 Gakuen-cho, Naka-ku, Sakai, Osaka 599-8531 (Japan)
Description
The energetics at oxide semiconductor/La1−xSrxCoO3 heterojunctions, including the respective alignment of the valence and conduction bands, govern charge transfer and have to be determined for the design of future La1−xSrxCoO3-based devices. In this letter, the electronic and atomic structures of epitaxial La1−xSrxCoO3 on Nb-doped strontium titanate are revealed by scanning transmission electron microscopy, electron energy loss spectroscopy, and in situ x-ray and ultra violet photoelectron spectroscopies. For LaCoO3, a valence band (VB) offset of 2.8 ± 0.1 eV is deduced. The large offset is attributed to the orbital contributions of the Co 3d states to the VB maximum of the LaCoO3 thin films, with no evidence of interface dipole contributions. The sensitivity of the valence band orbital character to spin state ordering and oxygen vacancies is assessed using density functional theory
Additional details
Identifiers
- DOI
- 10.1063/1.4922880;
Publishing Information
- Journal Title
- Applied Physics Letters
- Journal Volume
- 106
- Journal Issue
- 24
- Journal Page Range
- p. 241602-241602.5
- ISSN
- 0003-6951
- CODEN
- APPLAB
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 47053044
- Subject category
- S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
- Descriptors DEI
- DENSITY FUNCTIONAL METHOD; DOPED MATERIALS; ENERGY-LOSS SPECTROSCOPY; EPITAXY; INTERFACES; OXIDES; PHOTOELECTRON SPECTROSCOPY; SEMICONDUCTOR MATERIALS; SENSITIVITY; STRONTIUM TITANATES; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; VACANCIES; X RADIATION
- Descriptors DEC
- ALKALINE EARTH METAL COMPOUNDS; CALCULATION METHODS; CHALCOGENIDES; CRYSTAL DEFECTS; CRYSTAL GROWTH METHODS; CRYSTAL STRUCTURE; ELECTROMAGNETIC RADIATION; ELECTRON MICROSCOPY; ELECTRON SPECTROSCOPY; FILMS; IONIZING RADIATIONS; MATERIALS; MICROSCOPY; OXYGEN COMPOUNDS; POINT DEFECTS; RADIATIONS; SPECTROSCOPY; STRONTIUM COMPOUNDS; TITANATES; TITANIUM COMPOUNDS; TRANSITION ELEMENT COMPOUNDS; VARIATIONAL METHODS
Optional Information
- Notes
- (c) 2015 AIP Publishing LLC