Published June 15, 2015 | Version v1
Journal article

Interface energetics and atomic structure of epitaxial La1−xSrxCoO3 on Nb:SrTiO3

  • 1. Institute of Mechanics, Materials and Civil Engineering, Université catholique de Louvain, B-1348 Louvain-la-Neuve (Belgium)
  • 2. Fujitsu Laboratories, Atsugi, Kanagawa-ken (Japan)
  • 3. Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, 4259-G2-25 Nagatsuta, Midori-ku, Yokohama 226–8502 (Japan)
  • 4. Graduate School of Engineering, Osaka Prefecture University, 1-1 Gakuen-cho, Naka-ku, Sakai, Osaka 599-8531 (Japan)

Description

The energetics at oxide semiconductor/La1−xSrxCoO3 heterojunctions, including the respective alignment of the valence and conduction bands, govern charge transfer and have to be determined for the design of future La1−xSrxCoO3-based devices. In this letter, the electronic and atomic structures of epitaxial La1−xSrxCoO3 on Nb-doped strontium titanate are revealed by scanning transmission electron microscopy, electron energy loss spectroscopy, and in situ x-ray and ultra violet photoelectron spectroscopies. For LaCoO3, a valence band (VB) offset of 2.8 ± 0.1 eV is deduced. The large offset is attributed to the orbital contributions of the Co 3d states to the VB maximum of the LaCoO3 thin films, with no evidence of interface dipole contributions. The sensitivity of the valence band orbital character to spin state ordering and oxygen vacancies is assessed using density functional theory

Additional details

Identifiers

Publishing Information

Journal Title
Applied Physics Letters
Journal Volume
106
Journal Issue
24
Journal Page Range
p. 241602-241602.5
ISSN
0003-6951
CODEN
APPLAB

Optional Information

Notes
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