Published October 2020 | Version v1
Journal article

Optical properties of CdS nanocrystalline thin films in the abrupt phase transition from zinc blende to wurtzite

  • 1. Centro de Investigación y de Estudios Avanzados del Instituto Politécnico Nacional. Depto. de Física (Mexico)
  • 2. Unidad Querétaro, Centro de Investigación y de Estudios Avanzados del I.P.N. (Mexico)
  • 3. Centro de Investigación en Ciencia Aplicada y Tecnología Avanzada del I.P.N. (Mexico)
  • 4. SEES, Centro de Investigación y de Estudios Avanzados del I.P.N.. Depto. de Ingeniería Eléctrica (Mexico)
  • 5. Universidad Autónoma de Querétaro, Centro Universitario. Facultad de Ingeniería (Mexico)

Description

A set of cadmium sulfide (CdS) thin films was grown on glass substrates by the chemical bath deposition technique at different bath temperatures (Tb). A microwave oven was used to heat the precursor aqueous solution employed to prepare the films in the 60–97 °C interval. The average crystallite size of the CdS films lies in the 7–20 nm range, calculated from X-ray diffraction data. The diffraction patterns reveal that the crystalline structure of CdS nanoparticles is cubic zinc blende (ZB) for 60 ≤ Tb ≤ 93 °C, hexagonal wurtzite (WZ) for 95 ≤ Tb ≤ 97 °C, and ZB-WZ mix of phases for the critical temperature Tb ≅ 94 °C (Tbc). The mixture of both phases is supported by Transmission Electron Microscopy. The CdS films show preferred orientation along (111) and (002) directions for ZB and WZ, respectively. The optical properties reveal significant changes at Tbc, namely, the energy band gap, photoluminescence emission, and refractive index. The photoluminescence results show an additional band at the critical phase transition temperature due to the presence of a high-density Cd interstitial/vacancies, produced by the mix of phases. Furthermore, high-energy transitions above the conduction band also exhibit splitting due to the phase transition.

Additional details

Identifiers

Publishing Information

Journal Title
Journal of Materials Science. Materials in Electronics
Journal Volume
31
Journal Issue
19
Journal Page Range
p. 16561-16568
ISSN
0957-4522
CODEN
JSMEEV

Optional Information

Copyright
Copyright (c) 2020 © Springer Science+Business Media, LLC, part of Springer Nature 2020