Electron collision cross section sets of TMS and TEOS vapours
Creators
- 1. Division of Engineering, Graduate School of Engineering, Muroran Institute of Technology, Muroran, Hokkaido, 050-8585 (Japan)
- 2. Division of Information and Electronic Engineering, Graduate School of Engineering, Muroran Institute of Technology, Muroran, Hokkaido, 050-8585 (Japan)
Description
Reliable and detailed sets of electron collision cross sections for tetramethylsilane [TMS, Si(CH3)4] and tetraethoxysilane [TEOS, Si(OC2H5)4] vapours are proposed. The cross section sets of TMS and TEOS vapours include 16 and 20 kinds of partial ionization cross sections, respectively. Electron transport coefficients, such as electron drift velocity, ionization coefficient, and longitudinal diffusion coefficient, in those vapours are calculated by Monte Carlo simulations using the proposed cross section sets, and the validity of the sets is confirmed by comparing the calculated values of those transport coefficients with measured data. Furthermore, the calculated values of the ionization coefficient in TEOS/O2 mixtures are compared with measured data to confirm the validity of the proposed cross section set. (paper)
Availability note (English)
Available from http://dx.doi.org/10.1088/1361-6595/aa5fe0Additional details
Identifiers
Publishing Information
- Journal Title
- Plasma Sources Science and Technology
- Journal Volume
- 26
- Journal Issue
- 5
- Journal Page Range
- [7 p.]
- ISSN
- 0963-0252
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 49075260
- Subject category
- S70: PLASMA PHYSICS AND FUSION TECHNOLOGY;
- Descriptors DEI
- COMPARATIVE EVALUATIONS; COMPUTERIZED SIMULATION; CROSS SECTIONS; DIFFUSION; ELECTRON COLLISIONS; ELECTRON DRIFT; EXPERIMENT RESULTS; IONIZATION; MONTE CARLO METHOD; SILANES; VAPORS
- Descriptors DEC
- CALCULATION METHODS; COLLISIONS; EVALUATION; FLUIDS; GASES; HYDRIDES; HYDROGEN COMPOUNDS; ORGANIC COMPOUNDS; ORGANIC SILICON COMPOUNDS; SILICON COMPOUNDS; SIMULATION