Published 2005
| Version v1
Book
Study of ion irradiation induced nickel silicide formation in Ni/Si Interface
Creators
- 1. Surface Physics Division, Saha Institute of Nuclear Physics, Kolkata (India)
Description
This study deals with the ion irradiation induced nickel silicide formation at the interface between Ni and Si. Ni thin films of 600 A, deposited on Si(100) was irradiated by 300 keV 84Kr2+ ions with various doses and possible phase formation was examined using x-ray diffraction. The surface morphology and composition was analyzed using scanning electron microscopy and energy dispersive x-ray spectroscopy respectively. (author)
Additional details
Publishing Information
- Publisher
- Prime Time Education
- Imprint Place
- Mumbai (India)
- ISBN
- 81-8372-000-5
- Imprint Title
- Proceedings of the DAE solid state physics symposium. V. 49
- Imprint Pagination
- 1041 p.
- Journal Page Range
- p. 482-483
Conference
- Title
- 49. DAE solid state physics symposium
- Dates
- 26-30 Dec 2004
- Place
- Amritsar (India)
INIS
- Country of Publication
- India
- Country of Input or Organization
- India
- INIS RN
- 37061761
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- IRRADIATION; KRYPTON 84; KRYPTON IONS; MORPHOLOGY; NICKEL SILICIDES; PHASE TRANSFORMATIONS; PHYSICAL RADIATION EFFECTS; THIN FILMS; X-RAY SPECTRA
- Descriptors DEC
- CHARGED PARTICLES; EVEN-EVEN NUCLEI; FILMS; INTERMEDIATE MASS NUCLEI; IONS; ISOMERIC TRANSITION ISOTOPES; ISOTOPES; KRYPTON ISOTOPES; MICROSECONDS LIVING RADIOISOTOPES; NICKEL COMPOUNDS; NUCLEI; RADIATION EFFECTS; RADIOISOTOPES; SILICIDES; SILICON COMPOUNDS; SPECTRA; STABLE ISOTOPES; TRANSITION ELEMENT COMPOUNDS
Optional Information
- Notes
- 3 refs., 3 figs.