Atomistic configurational effects on piezoelectric properties of La3Ta0.5Ga5.5O14 and a new piezoelectric crystal design
- 1. Institute for Materials Research, Tohoku University, Miyagi 980-8577 (Japan)
- 2. Citizen Holdings Co. Ltd., Saitama 359-8511 (Japan)
Description
Single crystalline langatate (LTG, La3Ta0.5Ga5.5O14) has been widely used as a sensor material in high temperature applications because of its thermally stable piezoelectric properties. In this research, to elucidate the relationship between piezoelectric tensors and local ionic configurations, first-principles calculations based on density functional perturbation theory (DFPT) were performed on various local ionic structures. The results indicate that two independent relaxed-ion piezoelectric coefficients, e11 and e14, increased with increases in La(3e)-O and Ta(1a)-O distances or decreases in Ga(3f,2d)-O distances. Thus, to obtain high piezoelectric constants in this crystal, ions larger than La3+ should be incorporated at 3e sites to open the distance between 3e ions and oxygen ions, and ions smaller than Ga3+ should be introduced at 2d and 3f sites to reduce the distance between Ga and O ions. Finally, from this design rule, a new crystal, BTAS (Ba3TaAl3Si2O14), which belongs to the same P321 group, is proposed. The calculated relaxed-ion piezoelectric coefficient e11 of BTAS was 17.7% higher than the coefficient of a LTG crystal. This significant increase confirms BTAS as a useful new piezo-material, especially in applications where there is also a need to reduce the use of more expensive elements.
Availability note (English)
Available from http://dx.doi.org/10.1016/j.actamat.2011.07.011Additional details
Identifiers
- DOI
- 10.1016/j.actamat.2011.07.011;
- PII
- S1359-6454(11)00476-9;
Publishing Information
- Journal Title
- Acta Materialia
- Journal Volume
- 59
- Journal Issue
- 16
- Journal Page Range
- p. 6473-6479
- ISSN
- 1359-6454
- CODEN
- ACMAFD
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 43069226
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- CONFIGURATION; DENSITY FUNCTIONAL METHOD; DISTANCE; GALLIUM IONS; LANTHANUM IONS; MONOCRYSTALS; OXIDES; OXYGEN IONS; PERTURBATION THEORY; PIEZOELECTRICITY; TEMPERATURE RANGE 0400-1000 K; TRIGONAL LATTICES
- Descriptors DEC
- CALCULATION METHODS; CHALCOGENIDES; CHARGED PARTICLES; CRYSTAL LATTICES; CRYSTAL STRUCTURE; CRYSTALS; ELECTRICITY; IONS; OXYGEN COMPOUNDS; TEMPERATURE RANGE; VARIATIONAL METHODS
Optional Information
- Copyright
- Copyright (c) 2011 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.