A high purity n-type silicon detector for measuring low energy γ and X rays

The high purity silicon detectors of good performances for low energy γ and X rays have been prepared by using gold, palladium evaporation or boron ion implantation to make a barrier contact and lithium diffusion at low temperature to make an ohmic contact. The fabrication method and characteristics of detectors are introduced. The active area and the sensitive depth are 14.5 mm2 and 3.3 mm, the optimum energy resolution (FWHM) for 55Fe 5.9 keV X-ray and 241Am 59.5 keV low energy γ ray are 162 eV and 373 eV at 77K respectively. The fabricated high purity silicon detectors by three different methods are compared with the Si(Li) detectors for X-ray too