Published December 2011 | Version v1
Journal article

Systematic multi-configuration Dirac-Fock calculations of the Kα and Kβ X-ray spectra of silicon ions

  • 1. Institute of Atomic and Molecular Physics, Sichuan University, Chengdu 610065 (China)
  • 2. The Key Laboratory of High Energy Density Physics and Technology, Ministry of Education, Sichuan, Chengdu 610065 (China)

Description

The study of spectrum of silicon is important in various spectroscopic applications in plasma physics, fusion plasmas and atomic collisions. The transition energies, absorption oscillator strengths, line strengths and transition probabilities between computed levels are reported for the He-like to Ne-like Silicon ion sequences. Wavefunctions were determined relativistic configuration interaction (RCI) and multi-configuration Dirac-Fock (MCDF) technique included the Breit interaction, quantum electrodynamic (QED) corrections and nuclear mass corrections. The calculated values are in good agreement with the available experimental data and the recent theoretical values obtained from other methods. These data provide reference values for the level lifetimes, charge state distributions, and average charge of silicon plasmas

Availability note (English)

Available from doi: http://dx.doi.org/10.1140/epjd/e2011-10577-6

Additional details

Identifiers

Publishing Information

Journal Title
European Physical Journal. D, Atomic, Molecular, Optical and Plasma Physics
Journal Volume
65
Journal Issue
no.3
Journal Page Range
p. 505-508
ISSN
1434-6060

INIS

Country of Publication
France
Country of Input or Organization
France
INIS RN
43018801
Subject category
S74: ATOMIC AND MOLECULAR PHYSICS;
Descriptors DEI
ELECTRONIC STRUCTURE; ENERGY-LEVEL TRANSITIONS; OSCILLATOR STRENGTHS; SILICON IONS; X-RAY SPECTRA
Descriptors DEC
CHARGED PARTICLES; IONS; SPECTRA

Optional Information

Notes
26 refs.