Systematic multi-configuration Dirac-Fock calculations of the Kα and Kβ X-ray spectra of silicon ions
Creators
- 1. Institute of Atomic and Molecular Physics, Sichuan University, Chengdu 610065 (China)
- 2. The Key Laboratory of High Energy Density Physics and Technology, Ministry of Education, Sichuan, Chengdu 610065 (China)
Description
The study of spectrum of silicon is important in various spectroscopic applications in plasma physics, fusion plasmas and atomic collisions. The transition energies, absorption oscillator strengths, line strengths and transition probabilities between computed levels are reported for the He-like to Ne-like Silicon ion sequences. Wavefunctions were determined relativistic configuration interaction (RCI) and multi-configuration Dirac-Fock (MCDF) technique included the Breit interaction, quantum electrodynamic (QED) corrections and nuclear mass corrections. The calculated values are in good agreement with the available experimental data and the recent theoretical values obtained from other methods. These data provide reference values for the level lifetimes, charge state distributions, and average charge of silicon plasmas
Availability note (English)
Available from doi: http://dx.doi.org/10.1140/epjd/e2011-10577-6Additional details
Identifiers
Publishing Information
- Journal Title
- European Physical Journal. D, Atomic, Molecular, Optical and Plasma Physics
- Journal Volume
- 65
- Journal Issue
- no.3
- Journal Page Range
- p. 505-508
- ISSN
- 1434-6060
INIS
- Country of Publication
- France
- Country of Input or Organization
- France
- INIS RN
- 43018801
- Subject category
- S74: ATOMIC AND MOLECULAR PHYSICS;
- Descriptors DEI
- ELECTRONIC STRUCTURE; ENERGY-LEVEL TRANSITIONS; OSCILLATOR STRENGTHS; SILICON IONS; X-RAY SPECTRA
- Descriptors DEC
- CHARGED PARTICLES; IONS; SPECTRA
Optional Information
- Notes
- 26 refs.