Published June 1996
| Version v1
Journal article
Electron beam technology for improvement of the recovery characteristics of power thyristors
Creators
- 1. Institute for Atomic Phys., Bucharest (Romania). Electron Accel. Lab.
- 2. Radio Components and Semiconductors Enterprise Baneasa, Str. Erou Iancu Nicolae 32, Bucharest (Romania)
Description
The manufacture of semiconductor devices is one of the beneficiaries of electron accelerators. A brief survey of our recent results in the areas of power thyristors to improve their electrical characteristics is presented. The paper relates to an improved method to obtain high dynamic dv/dt fast thyristors by selective electron irradiation at high temperature. The method has the advantage of being easily controllable, highly reproducible, quick and of producing high electrical performance devices. (orig.)
Additional details
Publishing Information
- Journal Title
- Nuclear Instruments and Methods in Physics Research. Section B, Beam Interactions with Materials and Atoms
- Journal Volume
- 113
- Journal Issue
- 1-4
- Journal Page Range
- p. 103-105.
- ISSN
- 0168-583X
- CODEN
- NIMBEU
Conference
- Title
- 4. European conference on accelerators in applied research and technology (ECAART-4).
- Dates
- 29 Aug - 2 Sep 1995.
- Place
- Zurich (Switzerland).
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- Netherlands
- INIS RN
- 27065844
- Subject category
- S07: ISOTOPES AND RADIATION SOURCES;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- DOSE RATES; ELECTRIC CONDUCTIVITY; ELECTRON BEAMS; FABRICATION; HZ RANGE; IRRADIATION; MEV RANGE 01-10; MICRO AMP BEAM CURRENTS; PULSE TECHNIQUES; SEMICONDUCTOR MATERIALS; THYRISTORS; TIMING PROPERTIES
- Descriptors DEC
- BEAM CURRENTS; BEAMS; CURRENTS; ELECTRICAL PROPERTIES; ENERGY RANGE; FREQUENCY RANGE; LEPTON BEAMS; MATERIALS; MEV RANGE; PARTICLE BEAMS; PHYSICAL PROPERTIES; SEMICONDUCTOR DEVICES