Published May 2011 | Version v1
Journal article

The role of nonequilibrium charge in generation of the thermopower in extrinsic semiconductors

Creators

  • 1. Semiconductor Physics Institute of Center for Physical Sciences and Technology (Lithuania)

Description

A theory of the thermopower is developed with consideration for the nonequilibrium charge produced in a p-type semiconductor and metal contacts. It is shown that the thermopower is generated due to redistribution of the nonequilibrium charge between the metal contacts and semiconductor via transport of nonequilibrium electrons from the metal to the semiconductor through one of the surfaces and from the semiconductor to the metal through the other surface. In a p-type semiconductor sample with thickness smaller than the diffusion length, at certain surface parameters, the thermopower nonlinearly depends on the temperature difference.

Additional details

Identifiers

Publishing Information

Journal Title
Semiconductors
Journal Volume
45
Journal Issue
5
Journal Page Range
p. 593-598
ISSN
1063-7826
CODEN
SMICES

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
43094925
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
DIFFUSION LENGTH; METALS; SEMICONDUCTOR MATERIALS; SURFACES
Descriptors DEC
DIMENSIONS; ELEMENTS; LENGTH; MATERIALS

Optional Information

Copyright
Copyright (c) 2011 Pleiades Publishing, Ltd.