Published 1977 | Version v1
Book

Irradiation creep due to point defect absorption at dislocations

  • 1. Central Electricity Generating Board, Berkeley (UK). Berkeley Nuclear Labs.
  • 2. UKAEA Research Group, Harwell. Atomic Energy Research Establishment

Description

The stress induced preferential absorption (SIPA) mechanism of irradiation creep is briefly reviewed. Its origin is explained in terms of the first-order size effect interaction and the induced interaction between the intrinsic point defects and the dislocations. These two interactions combine in a body under uniaxial stress to ensure that preferential absorption of interstitials will occur at those edge dislocations oriented with their extra planes normal to the stress axis and vice-versa for the vacancies. A simplified rate theory argument is used to deduce the magnitude and microstructural dependence of the resulting creep strain. It is shown that the calculated creep rate is linear in applied stress and irradiating flux and is fairly independent of temperature. (author)

Additional details

Publishing Information

Publisher
The Metals Society.
Imprint Place
London
ISBN
0 904357 10 4
Imprint Title
Vacancies '76. Proceedings of a conference on 'point defect behaviour and diffusional processes' organized by the Metals Society and held at The Royal Fort, University of Bristol, on 13-16 September, 1976
Journal Page Range
p. 134-138.

Conference

Title
Conference on point defect behaviour and diffusional processes.
Dates
13 - 16 Sep 1976.
Place
Bristol, UK.

INIS

Country of Publication
United Kingdom
Country of Input or Organization
United Kingdom
INIS RN
9351892
Subject category
S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Conference
Descriptors DEI
CREEP; EDGE DISLOCATIONS; INTERSTITIALS; MATHEMATICAL MODELS; MICROSTRUCTURE; PHYSICAL RADIATION EFFECTS; SOLIDS; STRAINS; STRESSES; VACANCIES
Descriptors DEC
CRYSTAL DEFECTS; CRYSTAL STRUCTURE; DISLOCATIONS; LINE DEFECTS; MECHANICAL PROPERTIES; POINT DEFECTS; RADIATION EFFECTS