Published August 1, 1996
| Version v1
Journal article
The effect of radiation induced defects on the performance of high resistivity silicon diodes
Creators
- 1. Brunel Univ., Uxbridge (United Kingdom). Dept. of Physics
Description
An overview of defect kinetics in high resistivity silicon is presented. A device model which gives type inversion due to the presence of deep acceptors is described. (orig.)
Additional details
Publishing Information
- Journal Title
- Nuclear Instruments and Methods in Physics Research. Section A, Accelerators, Spectrometers, Detectors and Associated Equipment
- Journal Volume
- 377
- Journal Issue
- 2-3
- Journal Page Range
- p. 224-227.
- ISSN
- 0168-9002
- CODEN
- NIMAER
Conference
- Title
- 7. European symposium on semiconductor detectors, new developments in radiation detectors.
- Dates
- 7-10 May 1995.
- Place
- Schloss Elmau (Germany).
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- Netherlands
- INIS RN
- 27068944
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ANNEALING; CARRIER LIFETIME; DOPED MATERIALS; FISSION NEUTRONS; GAMMA RADIATION; INTERSTITIALS; KINETICS; MEV RANGE 01-10; N-TYPE CONDUCTORS; PHYSICAL RADIATION EFFECTS; SILICON; SILICON DIODES; SPECTROSCOPY; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0065-0273 K
- Descriptors DEC
- BARYONS; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; ELECTROMAGNETIC RADIATION; ELEMENTARY PARTICLES; ELEMENTS; ENERGY RANGE; FERMIONS; HADRONS; HEAT TREATMENTS; IONIZING RADIATIONS; LIFETIME; MATERIALS; MEV RANGE; NEUTRONS; NUCLEONS; POINT DEFECTS; RADIATION EFFECTS; RADIATIONS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES; SEMICONDUCTOR MATERIALS; SEMIMETALS; TEMPERATURE RANGE