Concepts on the directed lateral positioning of self-organized InAs quantum dots

This work shows the lateral site-control of self-organized Indiumgalliumarsenide-Gallium Quantum dots. This is achieved by molecular beam epitaxy on prepatterned substrates. These substrates were fabricated by classical semiconductor structuring with electron beam lithography and reactive ion etching. Regular hole patterns with different periodicities were overgrown with several layers of Quantum dots. The formation of lateral Quantum-dot molecules is observed and their optical properties are investigated. Furthermore, the lateral interference of strain fields of buried Quantum dots is shown and discribed by simulations