Structural, Optical and Electrical Properties of KCsI₂ Film Deposited by Spray Pyrolysis

A KCsI₂ film has been deposited on the glass by chemical spray pyrolysis (CSP) technique using an equal mixture of solvent solutions of KI and CsI at substrate temperature in the range of (150-300) °C. X-ray diffraction (XRD) results show that potassium cesium iodide films were polycrystalline in nature with centred cubic structure with sharp peaks along (200), (210), (003) and (110) planes. The electrical resistivity of the film increases with increasing the deposition temperatures reaching 3.59x108 Ωcm, while the mobility of films decreases from 1.47x104 to the value of 1.18x102 cm²/Vs after increasing the substrate temperature from 150 to 300 °C. The energy gap of the film increased from 3.25 to 4.15 eV as the substrate temperature increases from 150 to 300 °C. (paper)