Effect of current value on electroluminescence of defects caused by high-temperature post-implantation annealing of Si:(Er, O)-structures in chlorine-containing atmosphere

One investigated into dependence of defect electroluminescence (EL) on value of direct current in silicon structures obtained via implantation of erbium and oxygen ions into monocrystalline silicon followed by annealing in chlorine containing atmosphere under 1100 Deg C. Under 80 K with current increase one observes increase of energy of quanta conforming to maximums of two peaks of defect EL: from 0.807 and 0.87 eV up to 0.85 and 0.92 eV. With increase of current one observes as well, widening of half width of peak and EL intensification. To explain the observed phenomena one develops a model introduced earlier for defect EL in plastically deformed silicon which assumes possibility to produce inverse population according to four-level pattern