Published July 2004 | Version v1
Journal article

Electron cyclotron resonance plasma sputtering growth of textured films of c-axis-oriented LiNbO3 on Si(100) and Si(111) surfaces

  • 1. NTT Microsystem Integration Laboratories, 3-1 Morinosato Wakamiya, Atsugi-shi, Kanagawa 243-0198 (Japan)

Description

Textured films of c-axis-oriented lithium niobate (LN) in a single Li:Nb=1:1 phase have been grown on Si(100) and Si(111) substrates by electron cyclotron resonance (ECR) plasma sputtering. The O2 partial pressure is critical in determining the composition of the film, whereas the substrate temperature mainly affects crystallinity. At O2 flow rates between 1 and 1.5 sccm and growth temperature between 510 and 550 deg. C, the refractive indices of the films are within their minimum range. A crystal image of the LN film revealed columnar textured domains, about 40% of which were c-axis oriented. The plasma-enhanced migration of surface atoms is responsible for the polarized grain growth. The amorphous interlayer formed between the LN film and the Si substrate consisted of either a single layer (2 nm) or double component layers (4 nm). The orientation of the LN crystalline overlayer has some correlation with the structure of the underlying amorphous interlayer

Additional details

Identifiers

Publishing Information

Journal Title
Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films
Journal Volume
22
Journal Issue
4
Journal Page Range
p. 1793-1798
ISSN
0734-2101
CODEN
JVTAD6

Conference

Title
50. international AVS symposium and exhibition
Dates
2-7 Nov 2003
Place
Baltimore, MD (United States)

Optional Information

Notes
(c) 2004 American Vacuum Society.