Published April 2005
| Version v1
Journal article
Tunneling magnetoresistance of ultra-thin Co-SiO2 granular films with narrow current channels
Creators
- 1. Electronic and Control Systems Engineering, Shimane University, 1060 Nishikawatsu, Matsue, Shimane 690-8504 (Japan)
Description
We have constructed the tunneling magnetoresistance (TMR) junction of AuCr/SiO2/Co-SiO2/SiO2/AuCr with narrow current channels, where the TMR occurs in the Co-SiO2 layer with 10-50 nm thickness. The magnetic properties are independent of thickness, while the TMR properties depend fairly on thickness. The current (I)-bias voltage (V B) curve is nonlinear, namely the differential resistivity decreases with increasing V B, and also the magnetoresistance ratio decreases
Additional details
Identifiers
- DOI
- 10.1016/j.jmmm.2004.11.363;
- PII
- S0304-8853(04)01638-5;
Publishing Information
- Journal Title
- Journal of Magnetism and Magnetic Materials
- Journal Volume
- 290-291
- Journal Page Range
- p. 1053-1055
- ISSN
- 0304-8853
- CODEN
- JMMMDC
Conference
- Title
- Joint European magnetic symposia
- Acronym
- JEMS '04
- Dates
- 5-10 Sep 2004
- Place
- Dresden (Germany)
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 37024874
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- CHROMIUM COMPOUNDS; COBALT; FILMS; GOLD COMPOUNDS; LAYERS; MAGNETIC PROPERTIES; MAGNETORESISTANCE; SILICON OXIDES; THICKNESS; TUNNEL EFFECT
- Descriptors DEC
- CHALCOGENIDES; DIMENSIONS; ELECTRIC CONDUCTIVITY; ELECTRICAL PROPERTIES; ELEMENTS; METALS; OXIDES; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; SILICON COMPOUNDS; TRANSITION ELEMENT COMPOUNDS; TRANSITION ELEMENTS
Optional Information
- Copyright
- Copyright (c) 2004 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.