Published 1974
| Version v1
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Redistribution of boron in silicon through high temperature proton irradiation
- 1. Ecole Normale Superieure, 75 - Paris (France). Groupe de Physique des Solides
- 2. CEA Centre d'Etudes Nucleaires de Grenoble, 38 (France). Lab. d'Electronique et de Technologie de l'Informatique
- 3. CEA Centre d'Etudes Nucleaires de Grenoble, 38 (France). Section d'Etudes et d'Analyses Physico-Chimiques
Description
no abstract available
Availability note (English)
MF available from INIS under the Report Number.
Files
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Additional details
Publishing Information
- Imprint Pagination
- 10 p.
- Report number
- AED-Conf--74-328-005
Conference
- Title
- International conference on lattice defects in semiconductors.
- Dates
- 22 Jul 1974.
- Place
- Freiburg im Breisgau, F.R. Germany.
INIS
- Country of Publication
- Germany
- Country of Input or Organization
- Germany
- INIS RN
- 6169658
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- BORON; CRYSTAL MODELS; CRYSTALS; DISTRIBUTION; DOPED MATERIALS; HIGH TEMPERATURE; INTERSTITIALS; IRRADIATION; KEV RANGE; MASS SPECTROSCOPY; PHYSICAL RADIATION EFFECTS; PROTON BEAMS; SILICON; TRACE AMOUNTS
- Descriptors DEC
- BEAMS; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; ELEMENTS; ENERGY RANGE; MATHEMATICAL MODELS; NUCLEON BEAMS; PARTICLE BEAMS; POINT DEFECTS; RADIATION EFFECTS; SEMIMETALS; SPECTROSCOPY
Optional Information
- Notes
- 3 figs.; 15 refs. With abstract.