Published March 1989
| Version v1
Journal article
Multi-fluxon dynamics in inhomogeneous Josephson junctions
Creators
- 1. Institute of Solid State Physics, USSR Academy of Sciences, 142432 Chernogolovka, Moscow district (USSR)
Description
Long Josephson junctions Nb-NbO/sub x/-Pb with artificially formed SiO inhomgeneities in the insulator layer have been studied. A finest ture has been observed on the current - voltage characteristics of the junctions. Such structure is considered to be due to the resonance interaction between the fluxon and its radiation. Single-fluxon effect in zero magnetic field and multy-fluxon effect in large field have been studied experimentally. The results are compared with those of the perturbation theory and the numerical simulation. A multy-fluxon chain pinning effect observed in the commensurable lattice of inhomogeneities is reported and discussed
Additional details
Publishing Information
- Journal Title
- IEEE Transactions on Magnetics
- Journal Volume
- 25
- Journal Issue
- 2
- Series
- IEEE Trans. Magn.
- Journal Page Range
- 1440-1443
- ISSN
- 0018-9464
- CODEN
- IEMGA
Conference
- Title
- Applied superconductivity conference.
- Dates
- 21-25 Aug 1988.
- Place
- San Francisco, CA (USA).
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 20070900
- Subject category
- S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference, Numerical Data
- Descriptors DEI
- DYNAMICS; EXPERIMENTAL DATA; JOSEPHSON JUNCTIONS; LATTICE PARAMETERS; LEAD; MAGNETIC FIELDS; MATRIX MATERIALS; NIOBIUM OXIDES; NUMERICAL SOLUTION; PERTURBATION THEORY; SILICON OXIDES; SUPERCONDUCTIVITY
- Descriptors DEC
- CHALCOGENIDES; DATA; ELECTRIC CONDUCTIVITY; ELECTRICAL PROPERTIES; ELEMENTS; INFORMATION; MATERIALS; MECHANICS; METALS; NIOBIUM COMPOUNDS; NUMERICAL DATA; OXIDES; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; SEMICONDUCTOR JUNCTIONS; SILICON COMPOUNDS; TRANSITION ELEMENT COMPOUNDS
Optional Information
- Secondary number(s)
- CONF-880812--.