Published July 2010 | Version v1
Journal article

Nonlinear femtosecond laser processing of alkylsiloxane monolayers on surface-oxidized silicon substrates

  • 1. Fakultaet fuer Chemie, Universitaet Duisburg-Essen, 45117 Essen (Germany) and CeNIDE - Center for Nanointegration Duisburg-Essen, 47048 Duisburg (Germany) and NETZ - NanoEnergieTechnikZentrum, 47058 Duisburg (Germany)
  • 2. Laser Zentrum Hannover e. V., Hollerithallee 8, 30419 Hannover (Germany)
  • 3. Fakultaet fuer Chemie, Universitaet Duisburg-Essen, 45118 Essen (Germany) and CeNIDE -Center for Nanointegration Duisburg-Essen, 47048 Duisburg (Germany) and NETZ - NanoEnergieTechnikZentrum, 47057 Duisburg (Germany)

Description

Femtosecond laser patterning of octadecylsiloxane monolayers on surface-oxidized silicon substrates via single-pulse processing at λ=800 nm, τ<30 fs, and ambient conditions has been investigated. Depending on the laser pulse fluence, local irradiation results in circular spots of distinct size and morphology. At high fluences, a particular rich complexity of distinct surface morphologies is observed including hole, rim, and ripple formation, and a faint boundary area where monolayer decomposition sets in. At low fluences, subwavelength patterning of the organic monolayer is feasible. In particular, at a 1/e laser spot diameter of 1.3 μm, surface spots with a width down to 300 nm are fabricated. Selective processing of the organic monolayer, though, is restricted to a very narrow range of fluences between 1.1 and 1.2 J/cm2. A significantly larger parameter range for selective processing is anticipated in the case of functional monolayers that incorporate aromatic groups. Promising perspectives in femtosecond laser processing of organic monolayers are discussed.

Additional details

Identifiers

Publishing Information

Journal Title
Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films
Journal Volume
28
Journal Issue
4
Journal Page Range
p. 814-817
ISSN
1553-1813

Optional Information

Notes
(c) 2010 American Vacuum Society