Nonlinear femtosecond laser processing of alkylsiloxane monolayers on surface-oxidized silicon substrates
Creators
- 1. Fakultaet fuer Chemie, Universitaet Duisburg-Essen, 45117 Essen (Germany) and CeNIDE - Center for Nanointegration Duisburg-Essen, 47048 Duisburg (Germany) and NETZ - NanoEnergieTechnikZentrum, 47058 Duisburg (Germany)
- 2. Laser Zentrum Hannover e. V., Hollerithallee 8, 30419 Hannover (Germany)
- 3. Fakultaet fuer Chemie, Universitaet Duisburg-Essen, 45118 Essen (Germany) and CeNIDE -Center for Nanointegration Duisburg-Essen, 47048 Duisburg (Germany) and NETZ - NanoEnergieTechnikZentrum, 47057 Duisburg (Germany)
Description
Femtosecond laser patterning of octadecylsiloxane monolayers on surface-oxidized silicon substrates via single-pulse processing at λ=800 nm, τ<30 fs, and ambient conditions has been investigated. Depending on the laser pulse fluence, local irradiation results in circular spots of distinct size and morphology. At high fluences, a particular rich complexity of distinct surface morphologies is observed including hole, rim, and ripple formation, and a faint boundary area where monolayer decomposition sets in. At low fluences, subwavelength patterning of the organic monolayer is feasible. In particular, at a 1/e laser spot diameter of 1.3 μm, surface spots with a width down to 300 nm are fabricated. Selective processing of the organic monolayer, though, is restricted to a very narrow range of fluences between 1.1 and 1.2 J/cm2. A significantly larger parameter range for selective processing is anticipated in the case of functional monolayers that incorporate aromatic groups. Promising perspectives in femtosecond laser processing of organic monolayers are discussed.
Additional details
Identifiers
- DOI
- 10.1116/1.3281296;
Publishing Information
- Journal Title
- Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films
- Journal Volume
- 28
- Journal Issue
- 4
- Journal Page Range
- p. 814-817
- ISSN
- 1553-1813
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 44013703
- Subject category
- S36: MATERIALS SCIENCE; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- LASER RADIATION; LAYERS; LOCAL IRRADIATION; MORPHOLOGY; NONLINEAR PROBLEMS; ORGANIC COMPOUNDS; PULSED IRRADIATION; SILICON; SILICON OXIDES; SUBSTRATES; SURFACES
- Descriptors DEC
- CHALCOGENIDES; ELECTROMAGNETIC RADIATION; ELEMENTS; IRRADIATION; OXIDES; OXYGEN COMPOUNDS; RADIATIONS; SEMIMETALS; SILICON COMPOUNDS
Optional Information
- Notes
- (c) 2010 American Vacuum Society