Published May 15, 2001
| Version v1
Journal article
Grazing incidence small-angle x-ray scattering study of self-organized SiGe wires
Creators
- 1. Walter-Schottky Institut, Technische Universitaet Muenchen, D-85748 (Germany)
- 2. European Synchrotron Radiation Facility, F-38042 Grenoble Cedex 9 (France)
- 3. Institut fuer Halbleiterphysik, Johannes Kepler Universitaet, A-4040 Linz (Austria)
Description
The structure of self-organized quantum wires buried at the interfaces of a SiGe/Si multilayer is investigated by grazing incidence small-angle x-ray scattering. A nearly periodic distribution of wires, well described by a short-range ordering model, gives rise to intensity satellite maxima in reciprocal space. The shape of the wire cross section is determined from the heights of these intensity maxima, and the analysis reveals that the conventional step-bunching model is not sufficient to explain the wire shape
Additional details
Identifiers
Publishing Information
- Journal Title
- Physical Review. B, Condensed Matter and Materials Physics
- Journal Volume
- 63
- Journal Issue
- 20
- Journal Page Range
- p. 205318-205318.5
- ISSN
- 1098-0121
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 35081463
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S36: MATERIALS SCIENCE;
- Descriptors DEI
- CROSS SECTIONS; GERMANIUM ALLOYS; INTERFACES; QUANTUM WIRES; SEMICONDUCTOR MATERIALS; SILICON; SILICON ALLOYS; SMALL ANGLE SCATTERING; X-RAY DIFFRACTION
- Descriptors DEC
- ALLOYS; COHERENT SCATTERING; DIFFRACTION; ELEMENTS; MATERIALS; NANOSTRUCTURES; SCATTERING; SEMIMETALS
Optional Information
- Notes
- (c) 2001 The American Physical Society